REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS

[1] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[3] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[4] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[5] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 182 - 184

[6] JOHANSEN A, 1975, I PHYS C SER, V28, P267

[7] JOHNSON WS, 1969, PROJECTED RANGE STAT

[8] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[9] ENERGY-DEPENDENCE OF HE+ AND H+ CHANNELING IN SI OVERLAID WITH AU FILMS [J]. PHYSICAL REVIEW B, 1973, 7 (05): : 1782 - 1791

[10] MEASUREMENT OF PB+ ION COLLECTION IN SI BY HIGH DEPTH-RESOLUTION RUTHERFORD BACKSCATTERING [J]. PHYSICS LETTERS A, 1975, A 51 (02) : 85 - 86

[1] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[3] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[4] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[5] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 182 - 184

[6] JOHANSEN A, 1975, I PHYS C SER, V28, P267

[7] JOHNSON WS, 1969, PROJECTED RANGE STAT

[8] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[9] ENERGY-DEPENDENCE OF HE+ AND H+ CHANNELING IN SI OVERLAID WITH AU FILMS [J]. PHYSICAL REVIEW B, 1973, 7 (05): : 1782 - 1791

[10] MEASUREMENT OF PB+ ION COLLECTION IN SI BY HIGH DEPTH-RESOLUTION RUTHERFORD BACKSCATTERING [J]. PHYSICS LETTERS A, 1975, A 51 (02) : 85 - 86