ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI

被引：23

作者：

DIETRICH, HB ^{[1
]}

WEISENBERGER, WH ^{[1
]}

COMAS, J ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

关键词：

D O I：

10.1063/1.88716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：182 / 184

页数：3

共 14 条

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SHIFRIN, GA
MARSH, OJ
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[2] DOPING OF SILICON BY ION IMPLANTATION
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INADA, T
KANEKAWA, K
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (08) : 244 - &
[3] A GAS-RELEASE STUDY OF ANNEALING OF BOMBARDMENT-INDUCED DISORDER (STUDIES ON BOMBARDMENT-INDUCED DISORDER .I.
JECH, C
KELLY, R
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) : 465 - &
[4] JOHANSSON NGE, 1971, 1ST P INT C ION IMP, P225
[5] JOHNSON WS, 1969, PROJECTED RANGE STAT
[6] KELLY R, 1971, 1ST P INT C ION IMP, P215
[7] MASTERS BJ, 1971, 1ST P INT C ION IMPL, P224
[8] MAYER JW, ION IMPLANTATION SEM
[9] ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON
MEYER, O
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4166 - &
[10] MOREHEAD EF, 1971, 1ST P INT C ION IMPL, P25