EFFECTS OF ELECTRICALLY ACTIVE IMPURITIES ON THE EPITAXIAL REGROWTH RATE OF AMORPHIZED SILICON AND GERMANIUM

被引：78

作者：

SUNI, I

GOLTZ, G

NICOLET, MA

LAU, SS

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

来源：

THIN SOLID FILMS | 1982年 / 93卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(82)90102-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：171 / 178

页数：8

共 17 条

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[6] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

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SIGMON, TW .

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[7] CONCENTRATION PROFILES OF BORON IMPLANTATIONS IN AMORPHOUS AND POLYCRYSTALLINE SILICON [J].

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[8] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J].

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HESS, LD .

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[9]

LIETOILA A, UNPUB

[10] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J].

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