ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL

[1] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[3] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[4] CSEPREGI L, COMMUNICATION

[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[6] ERIKSSON L, 1969, RADIAT EFF, V1, P71

[7] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3776 - &

[8] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +

[9] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[10] MULLER H, 1975, APPL PHYS LETT, V26, P292, DOI 10.1063/1.88161

[1] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[3] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[4] CSEPREGI L, COMMUNICATION

[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[6] ERIKSSON L, 1969, RADIAT EFF, V1, P71

[7] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3776 - &

[8] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +

[9] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[10] MULLER H, 1975, APPL PHYS LETT, V26, P292, DOI 10.1063/1.88161