LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3702 - &

[2] BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[4] INFLUENCE OF N-TYPE DOPANTS ON LATTICE LOCATION OF IMPLANTED P-TYPE DOPANTS IN SI AND GE [J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 195 - +

[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[6] ERIKSSON L, 1966, CAN NUCL TECHNOL, V5, P40

[7] Fladda G., 1969, Radiation Effects, V1, P249, DOI 10.1080/00337576908235567

[8] MAYER JW, ION IMPLANTATION SEM

[9] MITCHELL IV, 1969, PRIVATE COMMUNICATIO

[10] NORTH JP, UNPUBLISHED

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3702 - &

[2] BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[4] INFLUENCE OF N-TYPE DOPANTS ON LATTICE LOCATION OF IMPLANTED P-TYPE DOPANTS IN SI AND GE [J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 195 - +

[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[6] ERIKSSON L, 1966, CAN NUCL TECHNOL, V5, P40

[7] Fladda G., 1969, Radiation Effects, V1, P249, DOI 10.1080/00337576908235567

[8] MAYER JW, ION IMPLANTATION SEM

[9] MITCHELL IV, 1969, PRIVATE COMMUNICATIO

[10] NORTH JP, UNPUBLISHED