CONCENTRATION-DEPENDENCE OF THE SOLID-PHASE EPITAXIAL-GROWTH RATE IN TE IMPLANTED SI

被引：12

作者：

CAMPISANO, SU

BARBARINO, AE

机构：

来源：

APPLIED PHYSICS | 1981年 / 25卷 / 02期

关键词：

D O I：

10.1007/BF00901288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：153 / 155

页数：3

共 8 条

[1] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J].

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FOTI, G .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :170-172

[2] SOLUTE TRAPPING BY MOVING INTERFACE IN ION-IMPLANTED SILICON [J].

CAMPISANO, SU ;

FOTI, G ;

BAERI, P ;

GRIMALDI, MG ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :719-722

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[6]

Kendall D. L., 1969, Semiconductor silicon, P358

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[8] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

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