SOLUTE TRAPPING BY MOVING INTERFACE IN ION-IMPLANTED SILICON

被引：53

作者：

CAMPISANO, SU

FOTI, G

BAERI, P

GRIMALDI, MG

RIMINI, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 08期

关键词：

D O I：

10.1063/1.92057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：719 / 722

页数：4

共 19 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

PHYSICAL REVIEW LETTERS, 1978, 41 (18) :1246-1249

[4]

BAERI P, UNPUBLISHED

[5] SOLUTE TRAPPING BY RAPID SOLIDIFICATION [J].

BAKER, JC ;

CAHN, JW .

ACTA METALLURGICA, 1969, 17 (05) :575-&

[6] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J].

BLOOD, P ;

BROWN, WL ;

MILLER, GL .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :173-182

[7] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J].

CAMPISANO, SU ;

RIMINI, E ;

BAERI, P ;

FOTI, G .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :170-172

[8] SURFACE ACCUMULATION OF TE ATOMS IN LASER MELTED TE-IMPLANTED SILICON [J].

CAMPISANO, SU ;

BAERI, P ;

GRIMALDI, MG ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3968-3970

[9]

CAMPISANO SU, 1980, APPL PHYS, V22, P1

[10] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

← 1 2 →