SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING

被引：62

作者：

BAERI, P

CAMPISANO, SU

FOTI, G

RIMINI, E

机构：

来源：

PHYSICAL REVIEW LETTERS | 1978年 / 41卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.41.1246

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1246 / 1249

页数：4

共 17 条

[1]

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[2]

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[3]

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[4] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[5]

DRESMER J, 1978, J PHYS CHEM SOLIDS, V29, P303

[6] LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON [J].

FOTI, G ;

CAMPISANO, SU ;

RIMINI, E ;

VITALI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2569-2571

[7] INVESTIGATION OF LASER-INDUCED DIFFUSION AND ANNEALING PROCESSES OF ARSENIC-IMPLANTED SILICON-CRYSTALS [J].

GEILER, HD ;

GOTZ, G ;

KLINGE, KD ;

TRIEM, N .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02) :K171-K173

[8] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[9]

KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[10]

KRYMICKI J, 1977, PHYS LETT A, V54, P157

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