CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON

被引：64

作者：

AUSTON, DH ^{[1
]}

GOLOVCHENKO, JA ^{[1
]}

SMITH, PR ^{[1
]}

SURKO, CM ^{[1
]}

VENKATESAN, TNC ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

关键词：

D O I：

10.1063/1.90429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：539 / 541

页数：3

共 11 条

[1] Auston D. H., 1978, APPL PHYS LETT, V33
[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
[3] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
GIBBONS, JF
MAGEE, TJ
PENG, J
DELINE, VR
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[4] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128
[5] KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190
[6] LAX M, UNPUBLISHED
[7] Mayer J. W., 1970, ION IMPLANTATION SEM
[8] MULLER H, 1975, APPL PHYS LETT, V26, P293
[9] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL
NISHI, H
SAKURAI, T
FURUYA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 461 - 466
[10] VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION
SEIDEL, TE
PASTEUR, GA
TSAI, JCC
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 648 - 651