VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION

[1] Baranova E. C., 1973, ION IMPLANTATION SEM, P59

[2] BRICE DK, 1971, ION IMPLANTATION, P101

[3] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[4] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[6] Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[7] FREEMAN JH, 1975, ION IMPLANTATION SEM, P555

[8] GROVES WO, 1962, SEMICOND PROD, V5, P25

[9] LEWIS A, 1972, THESIS U MARYLAND

[10] MOREHEAD FF, 1971, ION IMPLANTATION, P25

[1] Baranova E. C., 1973, ION IMPLANTATION SEM, P59

[2] BRICE DK, 1971, ION IMPLANTATION, P101

[3] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &

[4] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 645 - 648

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[6] Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[7] FREEMAN JH, 1975, ION IMPLANTATION SEM, P555

[8] GROVES WO, 1962, SEMICOND PROD, V5, P25

[9] LEWIS A, 1972, THESIS U MARYLAND

[10] MOREHEAD FF, 1971, ION IMPLANTATION, P25