PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81

[2] BOLOTOV VV, 1976, SOV PHYS SEMICOND+, V10, P338

[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[6] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[7] CONTACT METALLURGY FOR SHALLOW JUNCTION SI DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5394 - 5399

[8] KIRCHEV CJ, 1975, J APPL PHYS, V46, P2169

[9] KLIMENKO AG, 1976, SOV J QUANTUM ELECTR, V5, P1289

[10] KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81

[2] BOLOTOV VV, 1976, SOV PHYS SEMICOND+, V10, P338

[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[6] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[7] CONTACT METALLURGY FOR SHALLOW JUNCTION SI DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5394 - 5399

[8] KIRCHEV CJ, 1975, J APPL PHYS, V46, P2169

[9] KLIMENKO AG, 1976, SOV J QUANTUM ELECTR, V5, P1289

[10] KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265