CONTACT METALLURGY FOR SHALLOW JUNCTION SI DEVICES

被引：42

作者：

KIRCHER, CJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.322568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5394 / 5399

页数：6

共 15 条

[1] SILICON PROCESS TECHNOLOGY FOR MONOLITHIC MEMORY
COLLINS, RH
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NORTH, WD
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1972, 16 (01) : 2 - +
[2] COMMENT ON PAPTER FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS
CUNNINGHAM, JA
WAKEFIELD, RH
[J]. MICROELECTRONICS RELIABILITY, 1970, 9 (06) : 515 - +
[3] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
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LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
[4] ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) : 3476 - 3485
[5] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
KIRCHER, CJ
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (06) : 507 - +
[6] COMPARISON OF LEAKAGE CURRENTS IN ION-IMPLANTED AND DIFFUSED P-N-JUNCTIONS
KIRCHER, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2167 - 2173
[7] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS
MCCALDIN, JO
SANKUR, H
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &
[8] FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS
MCCARTHY, J
[J]. MICROELECTRONICS RELIABILITY, 1970, 9 (02) : 187 - &
[9] BEHAVIOR OF VARIOUS SILICON SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT
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SIRRINE, RC
LEMIEUX, P
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 493 - 494
[10] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION
SANKUR, H
MCCALDIN, JO
DEVANEY, J
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 64 - 66

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