COMPARISON OF LEAKAGE CURRENTS IN ION-IMPLANTED AND DIFFUSED P-N-JUNCTIONS

被引：23

作者：

KIRCHER, CJ ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, Yorktown Hts, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2167 / 2173

页数：7

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