DEFECT GENERATION IN SILICON

被引：16

作者：

DUMIN, DJ

HENRY, WN

机构：

来源：

METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 03期

关键词：

D O I：

10.1007/BF02662721

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：677 / &

共 14 条

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[6]

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JORDAN, AG .

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[8] EFFECTS OF CONTAMINATION ON ELECTRICAL PROPERTIES OF EDGE DISLOCATIONS IN SILICON [J].

GLAENZER, RH ;

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[9] OBSERVATION OF PARALLED ARRAYS OF PURE EDGE DISLOCATIONS IN SILICON [J].

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[10] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD [J].

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