CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD

被引：54

作者：

JUND, C

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 04期

关键词：

D O I：

10.1016/0038-1101(66)90061-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：315 / &

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