OBSERVATION OF PARALLED ARRAYS OF PURE EDGE DISLOCATIONS IN SILICON

被引：8

作者：

GREEN, D

GLAENZER, RH

JORDAN, AG

NOREIKA, AJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 06期

关键词：

D O I：

10.1063/1.1656697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2937 / &

共 14 条

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[2]

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[7] ANISOTROPIC MOBILITIES IN PLASTICALLY DEFORMED GERMANIUM [J].

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[8]

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[10] ARRANGEMENTS OF DISLOCATIONS IN PLASTICALLY BENT SILICON CRYSTALS [J].

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