DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS

被引：2074

作者：

DENNARD, RH ^{[1
]}

GAENSSLEN, FH ^{[1
]}

YU, HN ^{[1
]}

RIDEOUT, VL ^{[1
]}

BASSOUS, E ^{[1
]}

LEBLANC, AR ^{[1
]}

机构：

[1] IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1974年 / SC 9卷 / 05期

关键词：

D O I：

10.1109/JSSC.1974.1050511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：256 / 268

页数：13

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