EVIDENCE OF TYPE-I BAND OFFSETS IN STRAINED GAAS1-XSBX/GAAS QUANTUM-WELLS FROM HIGH-PRESSURE PHOTOLUMINESCENCE

被引:45
作者
PRINS, AD [1 ]
DUNSTAN, DJ [1 ]
LAMBKIN, JD [1 ]
OREILLY, EP [1 ]
ADAMS, AR [1 ]
PRITCHARD, R [1 ]
TRUSCOTT, WS [1 ]
SINGER, KE [1 ]
机构
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 04期
关键词
D O I
10.1103/PhysRevB.47.2191
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have used high-pressure photoluminescence in a diamond anvil cell to investigate the band offsets between strained GaAs1-xSbx and unstrained GaAs for x = 0.12. It has generally been expected that this system should display a strongly type-II band lineup, with holes confined in deep GaAs1-xSbx wells and the lowest-energy electron states in GaAs. Our results on a multiple-quantum-well sample show that this is not the case. We measure the photoluminescence transition energies up to and beyond the GAMMA-X crossover near 36 kbar, where the luminescence becomes indirect. The character of the GAMMA-X crossover dependence on well width requires a type-I offset for the X minimum and suggests a type-I offset for the GAMMA minimum of the conduction band. This is in good agreement with theory when the strong band-gap bowing in the GaAs1-xSbx alloy system is properly taken into account.
引用
收藏
页码:2191 / 2196
页数:6
相关论文
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