CRYSTAL-GROWTH OF CUINSE2 BY THE METHOD OF HORIZONTAL BRIDGMAN WITH 3 TEMPERATURE ZONES

被引:7
作者
MATSUSHITA, H [1 ]
SUZUKI, T [1 ]
ENDO, S [1 ]
IRIE, T [1 ]
机构
[1] SCI UNIV TOKYO,FAC ENGN,DEPT ELECT ENGN,SHINJUKU KU,TOKYO 162,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词
CUINSE(2) BULK CRYSTAL; HORIZONTAL BRIDGMAN; SE VAPOR PRESSURE; SE METAL RATIO; TRANSPORT PROPERTY;
D O I
10.7567/JJAPS.32S3.99
中图分类号
O59 [应用物理学];
学科分类号
摘要
The single crystals of CuInSe2 were prepared by the method of horizontal Bridgman with three temperature zones (3T-HB method). The Se content of the crystals increases with an increase of the Se vapor pressure under which the crystals are grown. The crystals prepared under the higher pressure than 10 Torr showed p-type conduction and was single phase, but those for the lower pressure showed n-type conduction and contained CuIn alloy phase. The Hall mobility of p-type crystals is maximum and the carrier concentration is minimum at 10 Torr of the Se vapor pressure.
引用
收藏
页码:99 / 100
页数:2
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