ELECTRICAL-PROPERTIES OF CUINSE2 SINGLE-CRYSTALS GROWN BY THE VERTICAL BRIDGMAN TECHNIQUE

被引：39

作者：

NEUMANN, H ^{[1
]}

TOMLINSON, RD ^{[1
]}

AVGERINOS, N ^{[1
]}

NOWAK, E ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 75卷 / 02期

关键词：

D O I：

10.1002/pssa.2210750265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K199 / K203

页数：5

共 13 条

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[6] NEUMANN H, 1981, CRYST RES TECHNOL, V16, P1369
[7] ELECTRICAL-PROPERTIES OF N-TYPE CUINSE2 SINGLE-CRYSTALS
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[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (11) : 899 - 902
[8] NEUMANN H, UNPUB
[9] NEUMANN H, 1983, CRYSTAL RES TECHNOL, V18
[10] EPITAXIAL LAYERS OF CUINSE2 ON GAAS
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