AU-GE/IN OHMIC CONTACTS TO N-TYPE GAAS

被引：3

作者：

BARNARD, WO

WILLIS, AJ

机构：

[1] CSIR,NATL INST MAT RES,PRETORIA 0001,SOUTH AFRICA

[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MATH,LONDON SW7 2BZ,ENGLAND

来源：

THIN SOLID FILMS | 1988年 / 165卷 / 01期

关键词：

Germanium and Alloys - Gold and Alloys - Semiconducting Gallium Arsenide - Spectroscopy; Auger Electron;

D O I：

10.1016/0040-6090(88)90680-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study structural and electrical investigations of the Au-Ge/In/GaAs system were carried out. The S shape of the log I vs. profile disappeared for the contacts annealed at temperatures higher than 350°C and correlated well with both theoretical models for a dual-phase system and the Auger electron spectroscopy results. The high ideality fractors for this metallization system suggested a recombination mechanism.

引用

页码：77 / 82

页数：6

共 15 条

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