COHERENT BREMSSTRAHLUNG AND CHANNELING RADIATION FROM 40 AND 150 GEV ELECTRONS AND POSITRONS TRAVERSING SI AND DIAMOND SINGLE-CRYSTALS NEAR PLANAR DIRECTIONS

被引：14

作者：

MEDENWALDT, R

MOLLER, SP

SORENSEN, AH

UGGERHOJ, E

ELSENER, K

HAGEALI, M

SIFFERT, P

STOQUERT, J

SONA, P

机构：

[1] CERN,CH-1211 GENEVA 23,SWITZERLAND

[2] CTR RECH NUCL,F-67037 STRASBOURG,FRANCE

[3] UNIV FLORENCE,DIPARTMENTO FIS,I-50125 FLORENCE,ITALY

[4] IST NAZL FIS NUCL,I-50125 FLORENCE,ITALY

来源：

PHYSICS LETTERS B | 1991年 / 260卷 / 1-2期

关键词：

D O I：

10.1016/0370-2693(91)90997-5

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Along planar directions in both Si and C single crystals the radiation yields from 150 GeV electrons are enhanced 40 times or more and the data present the first use of C crystals in the multi-hundred GeV region. For channeled electrons in Si the experimental results agree with calculations using the constant field approximation (CFA). Increasing incident angles reduce rapidly soft photon yields as expected from first order corrections to CFA. The first Born approximation only describes experimental results for large incident angles to planes.

引用

页码：235 / 239

页数：5

共 10 条

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