AVALANCHE BREAKDOWN AND PROBABILISTIC NATURE OF LASER-INDUCED DAMAGE

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[2] BASS M, NBSB41 SPEC PUBL, P90

[3] BASS M, 1971, 3 C LAS DAM BOUL CO

[4] UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1161 - 1165

[5] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540

[6] MAGNETORESISTANCE OF SEMICONDUCTING SRTIO3 [J]. PHYSICAL REVIEW, 1966, 143 (02): : 648 - +

[7] HELLWARTH RW, 1970, NBS341 SPEC PUBL, P67

[8] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J]. PHYSICAL REVIEW, 1967, 159 (03): : 624 - &

[9] KELDYSH LV, 1965, SOV PHYS JETP-USSR, V21, P1135

[10] MOLCHANOV AG, 1970, SOV PHYS-SOLID STATE, V12, P749

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[2] BASS M, NBSB41 SPEC PUBL, P90

[3] BASS M, 1971, 3 C LAS DAM BOUL CO

[4] UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1161 - 1165

[5] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540

[6] MAGNETORESISTANCE OF SEMICONDUCTING SRTIO3 [J]. PHYSICAL REVIEW, 1966, 143 (02): : 648 - +

[7] HELLWARTH RW, 1970, NBS341 SPEC PUBL, P67

[8] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J]. PHYSICAL REVIEW, 1967, 159 (03): : 624 - &

[9] KELDYSH LV, 1965, SOV PHYS JETP-USSR, V21, P1135

[10] MOLCHANOV AG, 1970, SOV PHYS-SOLID STATE, V12, P749