(ME5C5)SIH3 AND (ME5C5)2SIH2 AS PRECURSORS FOR LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CVD OF THIN SI3N4 AND SIO2-FILMS

被引：17

作者：

DAHLHAUS, J ^{[1
]}

JUTZI, P ^{[1
]}

FRENCK, HJ ^{[1
]}

KULISCH, W ^{[1
]}

机构：

[1] UNIV KASSEL,INST TECH PHYS,W-3500 KASSEL,GERMANY

来源：

ADVANCED MATERIALS | 1993年 / 5卷 / 05期

关键词：

D O I：

10.1002/adma.19930050510

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon nitride (Si3N4) and silica (SiO2) thin films are of interest for applications in microelectronics and optics. Non-hazardous alternatives to silane (SiH4) as the silicon precursor in the chemical vapor deposition (CVD) of these materials are an attractive target for research. It is shown that pentamethylcyclopentadiene-substituted silanes offer the opportunity to tailor precursors for particular CVD requirements.

引用

页码：377 / 380

页数：4

共 20 条

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