DOWNSTREAM PLASMA INDUCED DEPOSITION OF SINX ON SI, INP, AND INGAAS

被引：13

作者：

DZIOBA, S

MEIKLE, S

STREATER, RW

机构：

[1] Bell-Northern Research Limited, Ottawa, Ontario, K1Y 4H7, United States

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 10期

关键词：

D O I：

10.1149/1.2100250

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2599 / 2603

页数：5

共 17 条

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ANDERSON, CL .

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[5] ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PLASMA-DEPOSITED FROM SIF4, N2, AND H2 SOURCE GASES [J].

FUJITA, S ;

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SASAKI, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :426-431

[6] CHARACTERISTICS OF THE LOW-TEMPERATURE-DEPOSITED SIO2-GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR INTERFACE [J].

GARDNER, PD ;

NARAYAN, SY ;

YUN, YH .

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[7] MICROWAVE PLASMA CVD SYSTEM FOR THE FABRICATION OF THIN SOLID FILMS [J].

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KEZUKA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L470-L472

[8] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

LUCOVSKY, G ;

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TSU, DV ;

LIN, SY ;

MARKUNAS, RJ .

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[9]

MAES HE, 1983, ELECTROCHEMICAL SOC, P73

[10]

MATSUO S, 1983, JPN J APPL PHYS, V22, P121

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