ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PLASMA-DEPOSITED FROM SIF4, N2, AND H2 SOURCE GASES

被引：53

作者：

FUJITA, S

OHISHI, T

TOYOSHIMA, H

SASAKI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：426 / 431

页数：6

共 22 条

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[6]

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[7]

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[8]

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[10]

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