DEEP TRAP STATES IN SI3N4 LAYER ON SI SUBSTRATE

[1] IMPROVED MODEL FOR CHARGING CHARACTERISTICS OF A DUAL-DIELECTRIC (MNOS) NON-VOLATILE MEMORY DEVICE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1023 - 1030

[2] INFLUENCE OF NITRIDE THICKNESS VARIATIONS ON SWITCHING SPEED OF MNOS MEMORY TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1328 - 1331

[3] Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[4] TIME-DEPENDENCE OF CHARGE TRANSPORT IN MIS MEMORY TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 149 - +

[5] FUJITA S, 1980, ED8065 IECE GROUP EL

[6] MEMORY TRAPS IN MNOS DIODES MEASURED BY THERMALLY STIMULATED CURRENT [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 11 - 16

[7] LOW-FIELD TRANSIENT-BEHAVIOR OF MNOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 664 - 666

[8] EFFECTS OF NITRIDE DEPOSITION CONDITIONS ON CHARACTERISTICS OF AN MNOS NON-VOLATILE MEMORY TRANSISTOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) : 1773 - 1779

[9] Pulver M., 1970, Physica Status Solidi A, V1, P65, DOI 10.1002/pssa.19700010108

[10] ROSS EC, 1969, RCA REV, V30, P366

[1] IMPROVED MODEL FOR CHARGING CHARACTERISTICS OF A DUAL-DIELECTRIC (MNOS) NON-VOLATILE MEMORY DEVICE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1023 - 1030

[2] INFLUENCE OF NITRIDE THICKNESS VARIATIONS ON SWITCHING SPEED OF MNOS MEMORY TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1328 - 1331

[3] Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[4] TIME-DEPENDENCE OF CHARGE TRANSPORT IN MIS MEMORY TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 149 - +

[5] FUJITA S, 1980, ED8065 IECE GROUP EL

[6] MEMORY TRAPS IN MNOS DIODES MEASURED BY THERMALLY STIMULATED CURRENT [J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 11 - 16

[7] LOW-FIELD TRANSIENT-BEHAVIOR OF MNOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 664 - 666

[8] EFFECTS OF NITRIDE DEPOSITION CONDITIONS ON CHARACTERISTICS OF AN MNOS NON-VOLATILE MEMORY TRANSISTOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) : 1773 - 1779

[9] Pulver M., 1970, Physica Status Solidi A, V1, P65, DOI 10.1002/pssa.19700010108

[10] ROSS EC, 1969, RCA REV, V30, P366