LOW-FIELD TRANSIENT-BEHAVIOR OF MNOS DEVICES

被引:25
作者
MAES, HE [1 ]
VANOVERSTRAETEN, RJ [1 ]
机构
[1] KATHOLIEKE UNIV LEUVEN,LAB FYS & ELECTR HALFGELEIDERS,MERCIERLAAN 94,B-3030 HEVERLEE,BELGIUM
关键词
D O I
10.1063/1.322630
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:664 / 666
页数:3
相关论文
共 8 条
[1]  
GOODMAN AM, 1970, RCA REV, V31, P342
[2]   TUNNELING TO TRAPS IN INSULATORS [J].
LUNDSTROM, I ;
SVENSSON, C .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5045-5047
[3]  
LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826
[4]   LOW-FIELD TUNNELLING CURRENT IN THIN-OXIDE MNOS MEMORY TRANSISTORS [J].
MAES, H ;
VANOVERS.R .
ELECTRONICS LETTERS, 1973, 9 (02) :19-21
[5]   SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J].
MAES, H ;
VANOVERSTRAETEN, RJ .
APPLIED PHYSICS LETTERS, 1975, 27 (05) :282-284
[6]  
MAES H, 1974, THESIS KATHOLIEKE U
[7]   TRAP-ASSISTED CHARGE INJECTION IN MNOS STRUCTURES [J].
SVENSSON, C ;
LUNDSTROM, I .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4657-4663
[8]   ELECTRON AND HOLE TRANSPORT IN CVD SI3N4 FILMS [J].
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 27 (04) :256-258