SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES

[1] MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1451 - 1460

[2] Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[3] PROPERTIES OF MNOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 826 - &

[4] LOW-FIELD TUNNELLING CURRENT IN THIN-OXIDE MNOS MEMORY TRANSISTORS [J]. ELECTRONICS LETTERS, 1973, 9 (02) : 19 - 21

[5] MAES H, 1974, THESIS KATHOLIEKE U

[6] ROSS EC, 1969, RCA REV, V30, P366

[7] CHARACTERIZATION OF THIN OXIDE MNOS MEMORY TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) : 1280 - &

[8] MEASUREMENTS OF CHARGE PROPAGATION IN SI3N4 FILMS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (06) : 340 - 342

[1] MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1451 - 1460

[2] Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[3] PROPERTIES OF MNOS STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 826 - &

[4] LOW-FIELD TUNNELLING CURRENT IN THIN-OXIDE MNOS MEMORY TRANSISTORS [J]. ELECTRONICS LETTERS, 1973, 9 (02) : 19 - 21

[5] MAES H, 1974, THESIS KATHOLIEKE U

[6] ROSS EC, 1969, RCA REV, V30, P366

[7] CHARACTERIZATION OF THIN OXIDE MNOS MEMORY TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) : 1280 - &

[8] MEASUREMENTS OF CHARGE PROPAGATION IN SI3N4 FILMS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (06) : 340 - 342