MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE

被引：64

作者：

DECLERCK, G ^{[1
]}

VANOVERS.R ^{[1
]}

BROUX, G ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, KARDINAAL MERCIERLAAN 94, B-3030 HEVERLEE, BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 12期

关键词：

D O I：

10.1016/0038-1101(73)90062-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1451 / 1460

页数：10

共 16 条

[1] BACCARANI G, 1971, ALTA FREQUENZA
[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[3] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
CASTAGNE, R
VAPAILLE, A
[J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +
[4] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[5] INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
KLAUSMANN, E
GOETZBERGER, A
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +
[6] CHARACTERIZATION OF SURFACE STATES AT SI-SIO2 INTERFACE USING QUASI-STATIC TECHNIQUE
FOGELS, EA
SALAMA, CAT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (12) : 2002 - +
[7] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
HEINE, V
NICOLLIAN, EH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +
[8] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
KUHN, M
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +
[9] REDISTRIBUTION OF BORON AND PHOSPHORUS IN SILICON AFTER 2 OXIDATION STEPS USED IN MOST FABRICATION
MARGALIT, S
BARLEV, A
NEURGROS.A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) : 861 - +
[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

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