DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS

被引：444

作者：

CASTAGNE, R

VAPAILLE, A

机构：

来源：

SURFACE SCIENCE | 1971年 / 28卷 / 01期

关键词：

D O I：

10.1016/0039-6028(71)90092-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

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页码：157 / +

页数：1

相关论文

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