CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON

被引：49

作者：

ARNOLD, E

LADELL, J

ABOWITZ, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 12期

关键词：

D O I：

10.1063/1.1652496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：413 / +

页数：1

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