APPARENT INTERFACE STATE DENSITY INTRODUCED BY SPATIAL FLUCTUATIONS OF SURFACE POTENTIAL IN AN MOS STRUCTURE

被引：46

作者：

CASTAGNE, R

VAPAILLE, A

机构：

来源：

ELECTRONICS LETTERS | 1970年 / 6卷 / 22期

关键词：

D O I：

10.1049/el:19700481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：691 / +

页数：1

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