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CHARACTERIZATION OF SURFACE STATES AT SI-SIO2 INTERFACE USING QUASI-STATIC TECHNIQUE
被引:29
作者
:
FOGELS, EA
论文数:
0
引用数:
0
h-index:
0
FOGELS, EA
SALAMA, CAT
论文数:
0
引用数:
0
h-index:
0
SALAMA, CAT
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1971年
/ 118卷
/ 12期
关键词
:
D O I
:
10.1149/1.2407895
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:2002 / +
页数:1
相关论文
共 19 条
[1]
CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON
ARNOLD, E
论文数:
0
引用数:
0
h-index:
0
ARNOLD, E
LADELL, J
论文数:
0
引用数:
0
h-index:
0
LADELL, J
ABOWITZ, G
论文数:
0
引用数:
0
h-index:
0
ABOWITZ, G
[J].
APPLIED PHYSICS LETTERS,
1968,
13
(12)
: 413
-
+
[2]
BALK P, 1965, J ELECTROCHEM SOC, V112, pC185
[3]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[4]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 760
-
+
[5]
THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS
BURGESS, TE
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
BURGESS, TE
BAUM, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
BAUM, JC
FOWKES, FM
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
FOWKES, FM
HOLMSTROM, R
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
HOLMSTROM, R
SHIRN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
SHIRN, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 1005
-
+
[6]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[7]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P1000
[8]
LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 280
-
+
[9]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
[10]
CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(03)
: 266
-
+
←
1
2
→
共 19 条
[1]
CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON
ARNOLD, E
论文数:
0
引用数:
0
h-index:
0
ARNOLD, E
LADELL, J
论文数:
0
引用数:
0
h-index:
0
LADELL, J
ABOWITZ, G
论文数:
0
引用数:
0
h-index:
0
ABOWITZ, G
[J].
APPLIED PHYSICS LETTERS,
1968,
13
(12)
: 413
-
+
[2]
BALK P, 1965, J ELECTROCHEM SOC, V112, pC185
[3]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[4]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 760
-
+
[5]
THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS
BURGESS, TE
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
BURGESS, TE
BAUM, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
BAUM, JC
FOWKES, FM
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
FOWKES, FM
HOLMSTROM, R
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
HOLMSTROM, R
SHIRN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
SHIRN, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 1005
-
+
[6]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[7]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P1000
[8]
LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 280
-
+
[9]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
[10]
CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(03)
: 266
-
+
←
1
2
→