TRAP-ASSISTED CHARGE INJECTION IN MNOS STRUCTURES

被引：139

作者：

SVENSSON, C ^{[1
]}

LUNDSTROM, I ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, RES LAB ELECTR 3, GOTHENBURG, SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.1662016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4657 / 4663

页数：7

共 13 条

[1]

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[5] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

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[6]

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[7] PROPERTIES OF MNOS STRUCTURES [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :826-&

[8]

LUNDSTROM I, 1972, J APPL PHYS, V43, P4297

[9]

ROSS EC, 1969, RCA REV, V30, P366

[10] CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT [J].

SEWELL, FA ;

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APPLIED PHYSICS LETTERS, 1969, 14 (02) :45-&

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