TUNNELING TO TRAPS IN INSULATORS

被引：199

作者：

LUNDSTROM, I ^{[1
]}

SVENSSON, C ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN

来源：

关键词：

D O I：

10.1063/1.1661067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5045 / 5047

页数：3

共 12 条

[1] ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, P319
[2] THEORY OF TUNNELING INTO INTERFACE STATES
FREEMAN, LB
DAHLKE, WE
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1483 - +
[3] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS
FROHMANB.D
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1207 - +
[4] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
LENZLINGER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +
[5] KANE EO, 1969, TUNNELING PHENOMENA, P5
[6] LUNDKVIST L, UNPUBLISHED
[7] PROPERTIES OF MNOS STRUCTURES
LUNDSTRO.KI
SVENSSON, CM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 826 - &
[8] MERZBACHER E, 1961, QUANTUM MECHANICS, P209
[9] MEMORY BEHAVIOR OF AN MNS CAPACITOR
PAO, HC
OCONNELL, M
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (08) : 260 - &
[10] THEORY OF THIN-OXIDE MNOS MEMORY TRANSISTOR
SVENSSON, C
LUNDSTROM, I
[J]. ELECTRONICS LETTERS, 1970, 6 (20) : 645 - +