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METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS
被引:67
作者
:
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
FROHMANB.D
机构
:
来源
:
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS
|
1970年
/ 58卷
/ 08期
关键词
:
D O I
:
10.1109/PROC.1970.7897
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1207 / +
页数:1
相关论文
共 22 条
[1]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[2]
PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
SZEDON, JR
论文数:
0
引用数:
0
h-index:
0
SZEDON, JR
LEE, CH
论文数:
0
引用数:
0
h-index:
0
LEE, CH
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(09)
: 897
-
&
[3]
ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
FLEMING, PJ
论文数:
0
引用数:
0
h-index:
0
FLEMING, PJ
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 300
-
&
[4]
FLAD FW, 1969, FEB INT SOL STAT CIR
[5]
AN INTEGRATED METAL-NITRIDE-OXIDE-SILICON (MNOS) MEMORY
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Res. and Develop. Lab., Fairchild Semiconductor, Palo Alto
FROHMANB.D
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(06)
: 1190
-
&
[6]
CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, CA 94304
FROHMANB.D
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, CA 94304
LENZLINGER, M
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(08)
: 3307
-
+
[7]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]
EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
GREGOR, LV
论文数:
0
引用数:
0
h-index:
0
GREGOR, LV
[J].
APPLIED PHYSICS LETTERS,
1967,
10
(03)
: 97
-
&
[9]
KESHAVAN BV, 1968, OCT IEEE INT EL DEV
[10]
FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
LENZLINGER, M
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
SNOW, EH
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 278
-
+
←
1
2
3
→
共 22 条
[1]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[2]
PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
SZEDON, JR
论文数:
0
引用数:
0
h-index:
0
SZEDON, JR
LEE, CH
论文数:
0
引用数:
0
h-index:
0
LEE, CH
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(09)
: 897
-
&
[3]
ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
FLEMING, PJ
论文数:
0
引用数:
0
h-index:
0
FLEMING, PJ
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 300
-
&
[4]
FLAD FW, 1969, FEB INT SOL STAT CIR
[5]
AN INTEGRATED METAL-NITRIDE-OXIDE-SILICON (MNOS) MEMORY
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Res. and Develop. Lab., Fairchild Semiconductor, Palo Alto
FROHMANB.D
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(06)
: 1190
-
&
[6]
CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, CA 94304
FROHMANB.D
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, CA 94304
LENZLINGER, M
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(08)
: 3307
-
+
[7]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]
EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
GREGOR, LV
论文数:
0
引用数:
0
h-index:
0
GREGOR, LV
[J].
APPLIED PHYSICS LETTERS,
1967,
10
(03)
: 97
-
&
[9]
KESHAVAN BV, 1968, OCT IEEE INT EL DEV
[10]
FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
LENZLINGER, M
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
SNOW, EH
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 278
-
+
←
1
2
3
→