PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF FLUORINATED SILICON-NITRIDE

[1] VIBRATIONAL EXCITATIONS IN A-SI-F AND A-SI-(F,H) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (12) : 774 - 778

[2] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5630 - 5633

[3] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L100 - L102

[4] Fujita S., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1351

[5] DEEP TRAP STATES IN SI3N4 LAYER ON SI SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 917 - 923

[6] VARIATIONS OF TRAP STATES AND DANGLING BONDS IN CVD-SI3N4 LAYER ON SI SUBSTRATE BY NH3/SIH4 RATIO [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 795 - 812

[7] FUJITA S, 1983, 1983 P S SIL NITR TH, P266

[8] LEY LL, 1980, PHYS REV B, V22, P6140

[9] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6852 - 6856

[10] A HEAT-RESISTING NEW AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 439 - 440

[1] VIBRATIONAL EXCITATIONS IN A-SI-F AND A-SI-(F,H) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (12) : 774 - 778

[2] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5630 - 5633

[3] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L100 - L102

[4] Fujita S., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1351

[5] DEEP TRAP STATES IN SI3N4 LAYER ON SI SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 917 - 923

[6] VARIATIONS OF TRAP STATES AND DANGLING BONDS IN CVD-SI3N4 LAYER ON SI SUBSTRATE BY NH3/SIH4 RATIO [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 795 - 812

[7] FUJITA S, 1983, 1983 P S SIL NITR TH, P266

[8] LEY LL, 1980, PHYS REV B, V22, P6140

[9] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6852 - 6856

[10] A HEAT-RESISTING NEW AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 439 - 440