COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD

Plasma CVD silicon nitride films are produced from SiH//4-N//2 gas mixture with a constant flow ratio SiH//4/N//2 equals 0. 1. When the pressure decreases and the substrate temperature increases, the Si/N composition approaches the stoichiometric value 0. 75. As compared with the film deposited from SiH//4-NH//3 reaction, the present ammonia-free silicon nitride contains little N-H bonds and less hydrogen, and can be expected to have higher atom concentration and tight bondings.