HYDROGEN CONTENT AND DENSITY OF PLASMA-DEPOSITED AMORPHOUS SILICON-HYDROGEN

被引：106

作者：

FRITZSCHE, H ^{[1
]}

TANIELIAN, M ^{[1
]}

TSAI, CC ^{[1
]}

GACZI, PJ ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.326326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogen concentration and density of amorphous semiconducting films prepared by glow-discharge decomposition of silane have been measured as a function of deposition temperature. An inductively coupled as well as a capacitively coupled plasma-decomposition system was used. For samples prepared by the capacitively coupled system, the hydrogen content decreased from 26 to 8 at.% and the density increased from 1.9 to 2.27 g/cm3 as the substrate temperature was increased from 25 to 450 °C.

引用

页码：3366 / 3369

页数：4

共 33 条

[1]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].