QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON

[1] DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE [J]. THIN SOLID FILMS, 1977, 40 (JAN) : L23 - L25

[2] BRODSKY MH, UNPUBLISHED

[3] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804

[4] FRISCH MA, 1975, 23RD P ANN C MASS SP, P561

[5] KNIGHTS JC, 1976, AIP C P, V31, P296

[6] NEW PRECISION TECHNIQUE FOR MEASURING CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS [J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 566 - 568

[7] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 969 - 972

[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[10] [No title captured]

[1] DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE [J]. THIN SOLID FILMS, 1977, 40 (JAN) : L23 - L25

[2] BRODSKY MH, UNPUBLISHED

[3] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804

[4] FRISCH MA, 1975, 23RD P ANN C MASS SP, P561

[5] KNIGHTS JC, 1976, AIP C P, V31, P296

[6] NEW PRECISION TECHNIQUE FOR MEASURING CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS [J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 566 - 568

[7] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 969 - 972

[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[10] [No title captured]