DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING

被引：215

作者：

PAUL, W ^{[1
]}

LEWIS, AJ ^{[1
]}

CONNELL, GAN ^{[1
]}

MOUSTAKAS, TD ^{[1
]}

机构：

[1] HARVARD UNIV,DIV ENGN & APPL PHYS,CAMBRIDGE,MA 02138

来源：

关键词：

D O I：

10.1016/0038-1098(76)90485-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：969 / 972

页数：4

共 12 条

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[8] USE OF HYDROGENATION IN STUDY OF TRANSPORT PROPERTIES OF AMORPHOUS-GERMANIUM
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[9] CONDUCTIVITY AND THERMOELECTRIC-POWER OF AMORPHOUS-GERMANIUM AND AMORPHOUS SILICON
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[J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2565 - 2575
[10] Paul W., 1973, ADV PHYS, V22, P529