CONDUCTIVITY AND THERMOELECTRIC-POWER OF AMORPHOUS-GERMANIUM AND AMORPHOUS SILICON

被引：58

作者：

LEWIS, AJ ^{[1
]}

机构：

[1] HARVARD UNIV,DIV ENGN & APPL PHYS,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.13.2565

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2565 / 2575

页数：11

共 43 条

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