ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE

被引：622

作者：

SPEAR, WE ^{[1
]}

LECOMBER, PG ^{[1
]}

机构：

[1] UNIV DUNDEE CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE | 1976年 / 33卷 / 06期

关键词：

D O I：

10.1080/14786437608221926

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：935 / 949

页数：15

共 25 条

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[8] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X
[9] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS
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[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &
[10] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5