NOTE ON HEAVILY DOPED AMORPHOUS GERMANIUM

被引：4

作者：

KOC, S ^{[1
]}

ZAVETOVA, M ^{[1
]}

ZEMEK, J ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST SOLID STATE PHYS, PRAGUE, CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1007/BF01596890

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：155 / 156

页数：2

共 5 条

[1] Ideal-Real Semiconducting Glass and Low-High Conductivity Transition
Boeer, K. W.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (04): : 1007 - 1018
[2] GUBANOV AI, 1965, QUANTUM ELECTRON THE
[3] ELECTRICAL AND OPTICAL PROPERTIES OF ANNEALED AMORPHOUS GE
KOC, S
ZAVETOVA, M
ZEMEK, J
[J]. THIN SOLID FILMS, 1972, 10 (02) : 165 - &
[4] TEMPERATURE DEPENDENCE OF ABSORPTION EDGE OF AMORPHOUS GERMANIUM
ZAVETOVA, M
VORLICEK, V
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 48 (01): : 113 - &
[5] STEEP VS EXPONENTIAL ABSORPTION-EDGE IN AMORPHOUS GERMANIUM - EVIDENCE FOR EFFECT OF OXYGEN
ZAVETOVA, M
ZEMEK, J
KOC, S
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS SECTION B, 1972, B 22 (05): : 429 - &