PREPARATION AND PROPERTIES OF SILICON NITRIDE PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN - PREPARATION AND PROPERTIES OF SILICON NITRIDE

被引：22

作者：

KUWANO, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 01期

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D O I：

10.1143/JJAP.7.88

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：88 / &

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[1] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
CHU, TL
LEE, CH
GRUBER, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 717 - &
[2] MAXIMUM BLOCKING CAPABILITY OF SILICON THYRISTORS
HERLET, A
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 655 - &
[3] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
HU, SM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 693 - +
[4] PREPARATION AND PROPERTIES OF REACTIVELY SPUTTERED SILICON NITRIDE
JANUS, AR
SHIRN, GA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (01): : 37 - &
[5] PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION
SWANN, RCG
MEHTA, RR
CAUGE, TP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 713 - &