MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE

被引:144
作者
DUN, H
PAN, P
WHITE, FR
DOUSE, RW
机构
关键词
D O I
10.1149/1.2127682
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1555 / 1563
页数:9
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共 34 条
[1]   SPUTTERING OF DIELECTRICS BY HIGH-FREQUENCY FIELDS [J].
ANDERSON, GS ;
MAYER, WN ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :2991-&
[2]  
Bell A. T., 1974, Techniques and applications of plasma chemistry, P1
[3]   ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J].
BROWN, GA ;
ROBINETT.WC ;
CARLSON, HG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :948-&
[4]  
BROWN SC, 1966, INTRO ELECTRICAL DIS, P169
[5]  
BURGGRAF PS, 1980, SEMICONDUCTOR INT, V3, P23
[6]   POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J].
COBURN, JW ;
KAY, E .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :4965-4971
[7]   ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].
COBURN, JW ;
WINTERS, HF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196
[8]  
COLBY JW, 1971, 6TH P NAT C EL PROB
[9]   INVESTIGATION OF SPUTTERED BETA-TANTALUM THIN FILMS [J].
COOK, HC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (02) :80-&
[10]   INFLUENCE OF BIAS ON DEPOSITION OF METALLIC-FILMS IN RF AND DC SPUTTERING [J].
CUOMO, JJ ;
GAMBINO, RJ ;
ROSENBER.R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01) :34-40