MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE

被引:144
作者
DUN, H
PAN, P
WHITE, FR
DOUSE, RW
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关键词
D O I
10.1149/1.2127682
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1555 / 1563
页数:9
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VOSSEN JL, 1971, J VAC SCI TECHNOL, V8, P512
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WEAST RC, 1977, HDB CHEM PHYSICS, pF223