GLOW-DISCHARGE PHENOMENA IN PLASMA ETCHING AND PLASMA DEPOSITION

被引:158
作者
VOSSEN, JL
机构
[1] RCA Laboratories, Princeton
关键词
plasma deposition; plasma etching; plasma reactor design; sputtering;
D O I
10.1149/1.2129029
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The physical effects of glow discharges used for plasma deposition and plasma etching which can lead to contamination, radiation damage or bombardment-induced surface damage are reviewed. Different effects are observed for reactors with internal and external electrodes. Analyses of the electrical condition of important regions of both reactor types are given along with measured potentials in various systems. It is shown that substrates, internal walls and internal electrodes act as rf sputtering targets, and that the observed potentials are dependent both on reactor geometry and operating conditions. Techniques for minimizing contamination and damage are given. © 1979, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:319 / 324
页数:6
相关论文
共 16 条
[1]  
ANDERSON GS, 1966, J APPL PHYSICS, V37, P574
[2]  
[Anonymous], 1965, ELECT PROBES
[3]  
BERSIN R, 1975, Patent No. 3879597
[4]   PLASMA SHEATH FORMATION BY RADIO-FREQUENCY FIELDS [J].
BUTLER, HS ;
KINO, GS .
PHYSICS OF FLUIDS, 1963, 6 (09) :1346-1355
[5]   POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J].
COBURN, JW ;
KAY, E .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :4965-4971
[6]   IMPLANTATION AND DETECTION OF LOW ENERGY ARGON IONS IN SILICON SINGLE CRYSTALS [J].
COMAS, J ;
CAROSELL.CA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :974-&
[7]   ION ENERGIES AT CATHODE OF A GLOW DISCHARGE [J].
DAVIS, WD ;
VANDERSLICE, TA .
PHYSICAL REVIEW, 1963, 131 (01) :219-&
[8]  
ENGEL AV, 1965, IONIZED GASES, P234
[9]  
HOLLAHAN JR, 1978, THIN FILM PROCESSES, pCH4
[10]  
KOENIG HR, 1970, IBM J RES DEV, V14, P276