ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING

被引：692

作者：

COBURN, JW

WINTERS, HF

机构：

[1] IBM Research Laboratory, San Jose

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.326355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The extent to which gas-surface chemical reactions can be enhanced by energetic radiation (primarily ions and electrons) incident on the surface is described. Emphasis is placed on chemical systems which lead to volatile reaction products. In particular, the reactions of Si, SiO2, and Si3N4 with XeF2, F2, and Cl 2 are examined experimentally. Possible mechanisms for the radiation-induced enhancement are discussed and some technological implications of this process in plasma etching technology and lithography are considered.

引用

页码：3189 / 3196

页数：8

共 34 条

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